Category: RF & Microwave Circuit Design

This set of RF & Microwave Circuit Design Multiple Choice Questions & Answers (MCQs) focuses on “Monolithic Microwave Integrated Circuits”. 1. MMICs are high cost devices that involve complex fabrication methods and contain multiple layers to contain even small circuits.a) Trueb) False 2. The substrate of an MMIC must be a _____________ to accommodate the […]

This set of RF & Microwave Circuit Design Multiple Choice Questions & Answers (MCQs) focuses on “Hybrid Microwave Integrated Circuits”. 1. __________ is an important consideration for a hybrid integrated circuit.a) material selectionb) processing unitsc) design complexityd) active source 2. To fabricate a low frequency circuit using the hybrid microwave IC methodology, the material with […]

This set of RF & Microwave Circuit Design Multiple Choice Questions & Answers (MCQs) focuses on “Metal Oxide Semiconductor FET”. 1. MOSFETs can provide a power of several hundred watts when the devices are packaged in:a) Seriesb) Parallelc) Diagonald) None of the mentioned 2. High electron mobility transistors can be constructed with the use of […]

This set of RF & Microwave Circuit Design Multiple Choice Questions & Answers (MCQs) focuses on “Field Effect Transistors”. 1. GaAs MESFET –metal semiconductor field effect transistor are one of the widely used categories of FETs.a) trueb) false 2. At frequencies above 10GHz, MESFET are not suitable for microwave applications due to parasitic effects.a) trueb) […]

This set of RF & Microwave Circuit Design Multiple Choice Questions & Answers (MCQs) focuses on “Heterojunction BJT – 2″. 1. If the S11 and S22 parameters of a common emitter operated BJT is high:a) then the output and input ports are matched wellb) there is mismatch in the portsc) the gain of the amplifier is highd) […]

This set of RF & Microwave Circuit Design Multiple Choice Questions & Answers (MCQs) focuses on “Heterojunction BJT – 1″. 1. BJTs are suitable for RF applications because:a) good performance in terms of frequencyb) power capacityc) noise characteristicsd) all of the mentioned 2. Bipolar junction transistors have _______ 1/f characteristics hence making them suitable for […]

This set of RF & Microwave Circuit Design Multiple Choice Questions & Answers (MCQs) focuses on “Applications of RF diodes”. 1. Schottky barrier diode is a sophisticated version of the point contact ______________a) Germanium diodeb) Silicon crystal diodec) GaAs dioded) None of the mentioned 2. Advantage of Schottky diode over silicon crystal diode is the […]

This set of RF & Microwave Circuit Design Multiple Choice Questions & Answers (MCQs) focuses on “IMPATT and BARITT Diodes”. 1. When a reverse bias voltage exceeding the breakdown voltage is applied to an IMPATT diode, it results in:a) avalanche multiplicationb) break down of depletion regionc) high reverse saturation currentd) none of the mentioned 2. […]

This set of RF & Microwave Circuit Design Multiple Choice Questions & Answers (MCQs) focuses on “GUNN Diodes”. 1. GaAs is used in the fabrication of GUNN diodes because:a) GaAs is cost effectiveb) It less temperature sensitivec) it has low conduction band electronsd) less forbidden energy gap 2. In a GaAs n-type specimen, the current […]

This set of RF & Microwave Circuit Design Multiple Choice Questions & Answers (MCQs) focuses on “Varactor Diodes”. 1. Any semiconductor diode has a junction capacitance varying with reverse bias. If such a diode has microwave characteristics, it is called:a) IMPATT diodeb) TRAPITT diodec) SKOTTKY dioded) None of the mentioned 2. The width of depletion […]